• LED substrate material
  • LED substrate material
LED substrate material
LED substrate material
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LED substrate material

The α‑alumina ingots of high purity produced by the 5N gem‑flame process (Vernier method) serve as raw material for crystal growth techniques such as the Czochralski, Bridgman, float‑zone, vertical‑gradient freeze, and horizontal‑pull methods, and are primarily used as LED substrate materials. Melting point: 2050°C; Boiling point: 2200°C; Purity: 99.9998%; Density: 3.98 g/cm³; Mohs hardness: 9; MG (ppm wt): 0.46; Si (ppm wt): 0.58; Cl (ppm wt): 0.69; Ti (ppm wt): 0.33; Fe (ppm wt): <1.
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  • The α‑alumina ingots produced by the 5N gem‑flame process (Vernier method) are high‑purity raw materials used in crystal growth techniques such as the Czochralski, Bridgman, Kyropoulos, vertical gradient freeze, and horizontal methods, primarily for LED substrate applications. Melting point: 2050°C; Boiling point: 2200°C; Purity: 99.9998%; Density: 3.98 g/cm³; Mohs hardness: 9; MG (ppm wt): 0.46; Si (ppm wt): 0.58; Cl (ppm wt): 0.69; Ti (ppm wt): 0.33; Fe (ppm wt): <1.

LED substrate material

The α‑alumina ingots of high purity produced by the 5N gem‑flame process (Vernier method) serve as raw material for crystal growth techniques such as the Czochralski, Bridgman, float‑zone, vertical‑gradient freeze, and horizontal‑pull methods, and are primarily used as LED substrate materials. Melting point: 2050°C; Boiling point: 2200°C; Purity: 99.9998%; Density: 3.98 g/cm³; Mohs hardness: 9; MG (ppm wt): 0.46; Si (ppm wt): 0.58; Cl (ppm wt): 0.69; Ti (ppm wt): 0.33; Fe (ppm wt): <1.
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